hcpl-817 phototransistor optocoupler high density mounting type data sheet caution: it is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation which may be induced by esd. features ? current transfer ratio (ctr: min. 50% at i f = 5 ma, v ce = 5 v) ? high input-output isolation voltage (v iso = 5000 v rms ) ? response time (tr: typ., 4 s at vce = 2 v, ic = 2 ma, rl = 100 ) ? compact dual-in-line package ? ul approved ? csa approved ? iec/en/din en 60747-5-2 approved ? options available: C leads with 0.4" (10.16 mm) spacing (w00) C leads bends for surface mounting (300) C tape and reel for smd (500) C iec/en/din en 60747-5-2 approvals (060) applications ? signal transmission between circuits of di?erent potentials and impedances ? i/o interfaces for computers ? feedback circuit in power supply description the hcpl-817 contains a light emitting diode optically coupled to a phototransistor. it is packaged in a 4-pin dip package and available in wide-lead spacing option and lead bend smd option. input-output isolation voltage is 5000 vrms. response time, t r , is typically 4 s and minimum ctr is 50% at input current of 5 ma. schematic lead (pb) free rohs 6 fully compliant rohs 6 fully compliant options available; -xxxe denotes a lead-free product functional diagram 1 2 anode cathode v f + C i f 4 3 collector emitter i c 4 3 12 pin no. and internal connection diagram 1. anode 2. cathode 3. emitter 4. collector
2 ordering information hcpl-817-xxxx is ul recognized with 5000 vrms for 1 minute per ul1577 and is approved under csa component acceptance notice #5, file ca 88324. part number rohs compliant option package surface mount gull wing tape & reel iec/en/ din en 60747- 5-2 quantity rank 0 50% 3 package outline drawings hcpl-817-000e hcpl-817-w00e hcpl-817-060e 6.5 0.5 (0.256) dimensions in millimeters and (inches) 4.6 0.5 (0.181) 2.54 0.25 (0.1) 3.5 0.5 (0.138) 7.62 0.3 (0.3) 0.26 (0.010) 7.62 ~ 9.98 2.8 0.5 (0.110) 3.3 0.5 (0.130) 0.5 0.1 (0.02) 0.5 (0.02) typ. a 817 yww date code rank lead free anode 6.5 0.5 (0.256) dimensions in millimeters and (inches) 4.6 0.5 (0.181) 2.54 0.25 (0.1) 3.5 0.5 (0.138) 7.62 0.3 (0.3) 0.26 (0.010) 7.62 ~ 9.98 2.8 0.5 (0.110) 3.3 0.5 (0.130) 0.5 0.1 (0.02) 0.5 (0.02) typ. a 817v yww date code rank lead free anode 6.5 0.5 (0.256) dimensions in millimeters and (inches) 4.6 0.5 (0.181) 2.54 0.25 (0.1) 3.5 0.5 (0.138) 6.9 0.5 (0.272) 7.62 0.3 (0.3) 0.26 (0.010) 10.16 0.5 (0.4) 2.8 0.5 (0.110) 2.3 0.5 (0.09) 0.5 0.1 (0.02) a 817 yww date code rank lead free anode
4 hcpl-817-300e absolute maximum ratings (t a = 25c) storage temperature, t s C55c to +125c operating temperature, t a C30c to +100c lead solder temperature, max. (1.6 mm below seating plane) 260c for 10 s average forward current, i f 50 ma reverse input voltage, v r 6 v input power dissipation, p i 70 mw collector current, i c 50 ma collector-emitter voltage, v ceo 70 v emitter-collector voltage, v eco 6 v collector power dissipation 150 mw total power dissipation 200 mw isolation voltage, v iso (ac for 1 minute, r.h. = 40 ~ 60%) 5000 vrms note: non-halide ?ux should be used. 1. one-time soldering re?ow is recommended within the condition of temperature and time pro?le shown. 2. when using another soldering method such as infrared ray lamp, the temperature may rise partially in the mold of thedevice. keep the temperature on the package of the device within the condition of (1) above. 6.5 0.5 (0.256) dimensions in millimeters and (inches) 4.6 0.5 (0.181) 2.54 0.25 (0.1) 3.5 0.5 (0.138) 7.62 0.3 (0.3) 0.26 (0.010) 10.16 0.3 (0.4) 1.2 0.1 (0.047) 0.35 0.25 (0.014) 1.0 0.25 (0.039) a 817 yww date code rank lead free anode solder re?ow temperature pro?le 30 seconds 60 ~ 150 sec 90 sec 60 sec 60 sec 25c 150c 200c 250c 260c (peak temperature) 217c time (sec) temperature (c)
5 figure 1. forward current vs. temperature. f igure 2. collector power dissipation vs. temperature. figure 3. collector-emitter saturation voltage vs. forward current. * ctr = x 100% i c i f electrical speci?cations (t a = 25c) parameter symbol min. typ. max. units test conditions forward voltage v f C 1.2 1.4 v i f = 20 ma reverse current i r CC10 a v r = 4 v terminal capacitance c t C 30 250 pf v = 0, f = 1 khz collector dark current i ceo C C 100 na v ce = 20 v collector-emitter breakdown voltage bv ceo 70CCvi c = 0.1 ma emitter-collector breakdown voltage bv eco 6CCv i e = 10 a collector current i c 2.5 C 30 ma i f = 5 ma, v ce = 5 v, r be = *current transfer ratio ctr 50 C 600 % collector-emitter saturation voltage v ce(sat) C 0.1 0.2 v i f = 20 ma, i c = 1 ma response time (rise) t r C418 s v ce = 2 v, i c = 2 ma r l = 100 response time (fall) t f C318 s cut-o? frequency f c C80Ckhzv cc = 5 v, i c = 2 ma r l = 100 , C3 db isolation resistance r iso 5 x 10 10 1 x 10 11 C dc 500 v 40 ~ 60% r.h. floating capacitance c f C 0.6 1.0 pf v = 0, f = 1 mhz i f C forward current C ma 0 t a C ambient temperature C c 50 10 40 75 125 25 0 50 100 -30 60 30 20 p c C collector power dissipation C mw 0 t a C ambient temperature C c 100 50 200 150 75 125 25 0 50 100 -30 0 i f C forward current C ma 2 10 15 5 0 1 3 4 5 6 v ce(sat.) C collector-emitter saturation voltage C v t a = 25c i c = 0.5 ma i c = 1 ma i c = 3 ma i c = 5 ma i c = 7 ma
6 figure 4. forward current vs. forward voltage. f igure 5. current transfer ratio vs. forward current. figure 6. collector current vs. collector-emitter voltage . figure 7. relative current transfer ratio vs. temperature. figure 8. collector-emitter saturation voltage vs. temperatur e. figure 9. collector dark current vs. temperature. i f C forward current C ma 1 v f C forward voltage C v 2.0 3.0 10 5 500 1.0 0 0.5 1.5 2.5 2 20 50 100 200 t a = 25c t a = 0c t a = -25c 0 i f C forward current C ma 40 200 20 60 120 140 160 ctr C current transfer ratio C % v ce = 5 v t a = 25c 80 100 180 10 50 2 1520 i c C collector current C ma 0 v ce C collector-emitter voltage C v 40 20 50 i f = 30 ma i f = 25 ma 30 10 i f = 20 ma i f = 15 ma 69 3 012 45 78 relative current transfer ratio C % 0 100 50 150 v ce = 5 v i f = 5 ma t a C ambient temperature C c 75 25 0 50 100 -30 v ce(sat.) C collector-emitter saturation voltage C v 0 0.10 0.02 0.16 i c = 1 ma i f = 20 ma t a C ambient temperature C c 75 25 0 50 100 -25 0.04 0.06 0.08 0.12 0.14 i ceo C collector dark current C a t a C ambient temperature C c v ce = 20 v 10 -11 10 -10 10 -9 10 -8 10 -7 10 -6 75 25 0 50 100 -25 10 -5 p c (max.) t a = 25c i f = 10 ma i f = 5 ma t a = 75c t a = 50c
for product information and a complete list of distributors, please go to our web site: www.avagotech.com avago, avago technologies, and the a logo are trademarks of avago technologies in the united states and other countries. data subject to change. copyright ? 2005-2009 avago technologies. all rights reserved. obsoletes av01-0534en av02-0265n - november 5, 2009 test circuit for response time test circuit for frequency response figure 10. response time vs. load resistance. figure 11. frequency response. response time C s 0.1 r l C load resistance C kw 1 0.2 0.5 500 2 v ce = 2 v i c = 2 ma t a = 25c tf tr 0.1 5 0.5 0.2 2 10 0.05 1 5 10 20 50 100 200 ts td voltage gain av C db f C frequency C khz -20 -10 0 1 20 500 5 21050 0.5 100 200 r l = 10 k r l = 1 k r l = 100 v ce = 2 v i c = 2 ma t a = 25c v cc r d input r l output input output 10% 90% t d t r t f t s v cc r d r l output ~
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